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DMG2305UX-7 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
DMG2305UX-7DIODES41800Yes

DMG2305UX-7 is a P-Channel MOSFET manufactured by DIODES Incorporated.

The DMG2305UX-7 is a P-Channel MOSFET manufactured by DIODES Incorporated. Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDSS): -20V
  • Gate-Source Voltage (VGS): ±12V
  • Continuous Drain Current (ID): -4.3A
  • Pulsed Drain Current (IDM): -17A
  • Power Dissipation (PD): 1.4W (at 25°C)
  • RDS(ON) (Max): 45mΩ at VGS = -4.5V
  • RDS(ON) (Max): 60mΩ at VGS = -2.5V
  • Threshold Voltage (VGS(th)): -0.4V to -1.5V
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: SOT-23

Description:

The DMG2305UX-7 is a P-Channel Enhancement Mode MOSFET designed for low-voltage, high-efficiency power management applications. It features low on-resistance and fast switching performance, making it suitable for load switching, power management, and battery protection circuits.

Features:

  • Low On-Resistance (RDS(ON)): Optimized for minimal conduction losses.
  • Fast Switching Speed: Enhances efficiency in high-frequency applications.
  • Low Gate Charge (QG): Reduces drive requirements.
  • AEC-Q101 Qualified: Suitable for automotive applications.
  • Lead-Free & RoHS Compliant: Meets environmental standards.
  • Small Form Factor (SOT-23): Ideal for space-constrained designs.

For detailed electrical characteristics and application notes, refer to the official datasheet from DIODES Incorporated.

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