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DMN53D0LDW-7 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
DMN53D0LDW-7DIODES15000Yes

DMN53D0LDW-7** is a MOSFET manufactured by **DIODES Incorporated**.

The DMN53D0LDW-7 is a MOSFET manufactured by DIODES Incorporated. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 50A
  • Pulsed Drain Current (IDM): 200A
  • RDS(ON) (Max): 5.3mΩ @ VGS = 10V
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 50W
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: PowerDI® 5060 (5.0mm x 6.0mm)

Descriptions:

  • Designed for high-efficiency power management applications.
  • Suitable for switching circuits in power supplies, motor control, and battery management systems.
  • Low on-resistance (RDS(ON)) for reduced conduction losses.

Features:

  • Low RDS(ON): Enhances power efficiency.
  • Fast Switching: Optimized for high-frequency applications.
  • AEC-Q101 Qualified: Suitable for automotive applications.
  • Lead-Free & RoHS Compliant: Meets environmental standards.

For detailed electrical characteristics and application notes, refer to the official datasheet from DIODES Incorporated.

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