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MMBT3904-7-F Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMBT3904-7-FDIODES610609Yes

MMBT3904-7-F** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **DIODES Incorporated**.

The MMBT3904-7-F is a general-purpose NPN bipolar junction transistor (BJT) manufactured by DIODES Incorporated.

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCE): 40V
  • Collector-Base Voltage (VCB): 60V
  • Emitter-Base Voltage (VEB): 6V
  • Continuous Collector Current (IC): 200mA
  • Total Power Dissipation (PD): 350mW
  • DC Current Gain (hFE): 100-300 @ 10mA
  • Transition Frequency (fT): 300MHz
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: SOT-23 (3-pin)

Descriptions:

The MMBT3904-7-F is a small-signal transistor designed for general-purpose amplification and switching applications. It is a surface-mount device (SMD) in an SOT-23 package, making it suitable for compact PCB designs.

Features:

  • High current gain (hFE)
  • Low saturation voltage
  • Fast switching speed
  • Pb-free and RoHS compliant

This transistor is commonly used in signal amplification, switching circuits, and driver stages in electronic devices.

(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)

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