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ZXTN2010ZTA Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
ZXTN2010ZTADIODES10650Yes

ZXTN2010ZTA** is an NPN bipolar junction transistor (BJT) manufactured by **DIODES Incorporated**.

The ZXTN2010ZTA is an NPN bipolar junction transistor (BJT) manufactured by DIODES Incorporated.

Specifications:

  • Type: NPN Transistor
  • Collector-Emitter Voltage (VCE): 20V
  • Collector-Base Voltage (VCB): 20V
  • Emitter-Base Voltage (VEB): 5V
  • Continuous Collector Current (IC): 3A
  • Power Dissipation (PD): 1.25W (at 25°C)
  • DC Current Gain (hFE): 100 (min) at IC = 500mA, VCE = 1V
  • Transition Frequency (fT): 150MHz (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-89

Descriptions:

The ZXTN2010ZTA is a high-current, low-voltage NPN transistor designed for general-purpose amplification and switching applications. It offers high current gain and fast switching performance, making it suitable for power management and signal amplification circuits.

Features:

  • High current capability (3A)
  • Low saturation voltage
  • High DC current gain (hFE)
  • Fast switching speed
  • Compact SOT-89 package

This transistor is commonly used in power supply circuits, motor control, and other applications requiring efficient switching and amplification.

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