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E13005-1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
E13005-1FAI150Yes

E13005-1 is a high-voltage NPN bipolar junction transistor (BJT) manufactured by FAI Electronics.

The E13005-1 is a high-voltage NPN bipolar junction transistor (BJT) manufactured by FAI Electronics. Below are the factual specifications, descriptions, and features:

Manufacturer Specifications (FAI Electronics):

  • Type: NPN Bipolar Transistor
  • Collector-Emitter Voltage (VCEO): 400V
  • Collector-Base Voltage (VCBO): 500V
  • Emitter-Base Voltage (VEBO): 7V
  • Collector Current (IC): 4A
  • Peak Collector Current (ICM): 8A
  • Power Dissipation (PD): 50W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 8-40 (tested at IC = 1A, VCE = 5V)
  • Turn-on Time (ton): ≤ 1μs
  • Turn-off Time (toff): ≤ 3μs

Description:

The E13005-1 is a high-voltage, high-speed switching transistor designed for applications requiring robust performance in power switching circuits. It is commonly used in electronic ballasts, power supplies, and inverters.

Features:

  • High voltage capability (400V VCEO)
  • Fast switching speed
  • Low saturation voltage
  • High current handling (4A continuous, 8A peak)
  • TO-220 package for efficient heat dissipation

These specifications are based on FAI Electronics' datasheet for the E13005-1 transistor.

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