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FDN352AP Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FDN352APFAIRCHILD3000Yes

Single P-Channel, PowerTrench

The FDN352AP is a P-Channel Logic Level Enhancement Mode Field Effect Transistor (FET) manufactured by FAIRCHILD Semiconductor.

Specifications:

  • Type: P-Channel MOSFET
  • Drain-Source Voltage (VDS): -30V
  • Gate-Source Voltage (VGS): ±12V
  • Continuous Drain Current (ID): -2.7A
  • Power Dissipation (PD): 1.6W
  • On-Resistance (RDS(on)): 85mΩ @ VGS = -10V
  • Threshold Voltage (VGS(th)): -1V to -3V
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (3-Lead)

Descriptions & Features:

  • Designed for low-voltage, high-speed switching applications.
  • Logic-level compatible (can be driven by 5V or lower signals).
  • Low on-resistance (RDS(on)) for efficient power management.
  • Fast switching speed for improved performance in switching circuits.
  • Small SOT-23 package for space-constrained applications.
  • RoHS compliant (lead-free and environmentally friendly).

This MOSFET is commonly used in power management, load switching, DC-DC converters, and battery protection circuits.

For detailed electrical characteristics and application notes, refer to the official FAIRCHILD datasheet.

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