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MST4H40C Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MST4H40CFairchild3000Yes

MST4H40C** is a power MOSFET manufactured by **Fairchild Semiconductor** (now part of ON Semiconductor).

The MST4H40C is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 40V
  • Continuous Drain Current (ID): 40A
  • Pulsed Drain Current (IDM): 160A
  • Power Dissipation (PD): 125W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)):
  • 9.5mΩ (at VGS = 10V)
  • 11mΩ (at VGS = 4.5V)
  • Threshold Voltage (VGS(th)): 2V (min) to 4V (max)
  • Input Capacitance (Ciss): 2100pF
  • Output Capacitance (Coss): 700pF
  • Reverse Transfer Capacitance (Crss): 200pF
  • Switching Speed:
  • Turn-On Delay Time (td(on)): 15ns
  • Turn-Off Delay Time (td(off)): 50ns
  • Package: TO-220

Descriptions:

  • Designed for high-efficiency power switching applications.
  • Suitable for DC-DC converters, motor control, and power management circuits.
  • Features low on-resistance for reduced conduction losses.
  • Fast switching capability for improved performance in high-frequency applications.

Features:

  • Low RDS(on) for minimal power loss.
  • High current handling (40A continuous).
  • Avalanche energy rated for ruggedness.
  • Optimized gate charge for fast switching.
  • TO-220 package for efficient thermal dissipation.

This MOSFET is commonly used in automotive, industrial, and consumer electronics applications requiring high power efficiency.

*(Note: Fairchild Semiconductor was acquired by ON Semiconductor in 2016.)*

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