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MB81C4256A-70PSZ Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MB81C4256A-70PSZFUJ457Yes

MB81C4256A-70PSZ** is a high-speed CMOS static RAM (SRAM) manufactured by **FUJITSU (FUJ)**.

The MB81C4256A-70PSZ is a high-speed CMOS static RAM (SRAM) manufactured by FUJITSU (FUJ). Below are its key specifications, descriptions, and features:

Specifications:

  • Type: 256K-bit (32K x 8-bit) Static RAM
  • Technology: High-speed CMOS
  • Access Time: 70 ns
  • Operating Voltage: 5V ±10%
  • Package: 24-pin Plastic SOP (PSZ)
  • Operating Temperature Range: 0°C to +70°C (Commercial Grade)
  • Standby Current (Max): 10 μA (TTL level)
  • Active Current (Max): 80 mA (at 70 ns access time)
  • Data Retention Voltage: 2V (min)
  • Tri-State Outputs: Yes

Descriptions:

  • The MB81C4256A-70PSZ is a low-power, high-performance SRAM designed for applications requiring fast access times and battery backup capability.
  • It features a common I/O structure, simplifying interfacing with microprocessors.
  • The device is compatible with TTL levels and includes a chip enable (CE) input for power-down mode.

Features:

  • High-speed access time: 70 ns
  • Low power consumption:
  • Active current: 80 mA (max)
  • Standby current: 10 μA (max, TTL level)
  • Fully static operation: No clock or refresh required
  • Single 5V power supply
  • TTL-compatible inputs/outputs
  • Three-state outputs for bus-oriented applications
  • Battery backup capability (data retention at 2V)
  • 24-pin SOP package for space-saving designs

This SRAM is suitable for embedded systems, industrial controls, telecommunications, and battery-backed memory applications.

*(Note: Always refer to the official datasheet for detailed electrical characteristics and application notes.)*

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