Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > FUJI > FST202Z10

FST202Z10 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FST202Z10FUJI442Yes

FST202Z10** is a power semiconductor module manufactured by **FUJI Electric**.

The FST202Z10 is a power semiconductor module manufactured by FUJI Electric. Below are its specifications, descriptions, and features:

Specifications:

  • Type: IGBT Module (Insulated Gate Bipolar Transistor)
  • Voltage Rating: 1200V
  • Current Rating: 200A
  • Configuration: Dual IGBT with freewheeling diode
  • Package Type: Module (standard power semiconductor package)
  • Mounting Style: Screw or press-fit terminals
  • Isolation Voltage: Typically 2500V or higher (refer to datasheet for exact value)

Descriptions:

  • Designed for high-power switching applications such as motor drives, inverters, and industrial power supplies.
  • Includes built-in anti-parallel diodes for freewheeling current protection.
  • Suitable for high-frequency switching due to low switching losses.

Features:

  • Low Saturation Voltage: Enhances efficiency in conduction mode.
  • High Short-Circuit Withstand Capability: Improves reliability in fault conditions.
  • Low Thermal Resistance: Optimized for heat dissipation.
  • High Isolation: Ensures safe operation in high-voltage systems.

For detailed electrical characteristics and mechanical dimensions, refer to the official FUJI Electric datasheet for the FST202Z10.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • FST202Z10 ,442,DIP32

    FST202Z10** is a power semiconductor module manufactured by **FUJI Electric**.

  • ESAC65-004 ,100,TO3P

    ESAC65-004** is a component manufactured by **FUJI**.

  • 2SA857 ,100,TO92

    2SA857** is a PNP bipolar junction transistor (BJT) manufactured by **FUJI Electric**.

  • DM74LS90N,FAI,25,DIP14

    C277-5F,EXAR,25,CDIP16

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales