Professional IC Distribution & Technical Solutions

The MB85RC256VPNF-G-JNERE1 is a FRAM (Ferroelectric Random Access Memory) device manufactured by Fujitsu. Below are its key specifications, descriptions, and features:

Specifications:

• Memory Type: FRAM (Non-volatile)
• Memory Size: 256 Kbit (32K × 8-bit)
• Interface: I²C (Two-wire Serial Interface)
• Operating Voltage: 3.0V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Write Endurance: 10 trillion (10^13) read/write cycles
• Data Retention: 10 years (at 85°C)
• Package: 8-pin SOP (Small Outline Package)
• Speed: 400 kHz (Fast-mode I²C)
• Low Power Consumption:
• Active Current: 130 µA (Typical)
• Standby Current: 10 µA (Typical)

Descriptions:

• Non-volatile Memory: Retains data without power, similar to EEPROM or Flash, but with faster write speeds and higher endurance.
• High-Speed Write Performance: No write delays (unlike EEPROM/Flash).
• I²C-Compatible Interface: Supports standard two-wire serial communication.
• Industrial-Grade Reliability: Suitable for harsh environments with extended temperature ranges.

Features:

• Ultra-High Endurance: Supports frequent read/write operations without degradation.
• Fast Write Speed: Near-instant writes (no erase-before-write needed).
• Low Power Operation: Ideal for battery-powered applications.
• Hardware Write Protection: Supports WP (Write Protect) pin for data security.
• RoHS Compliant: Meets environmental standards.

This FRAM is commonly used in applications requiring frequent data logging, real-time system monitoring, and embedded systems where fast, reliable non-volatile memory is critical.

For further details, refer to the official Fujitsu datasheet.