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MB85RC64V Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MB85RC64VFujitsu2436Yes

MB85RC64V** is a FRAM (Ferroelectric Random Access Memory) device manufactured by **Fujitsu Semiconductor**.

The MB85RC64V is a FRAM (Ferroelectric Random Access Memory) device manufactured by Fujitsu Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Memory Type: FRAM (Non-volatile)
  • Density: 64 Kbit (8 K × 8 bits)
  • Interface: I²C (Two-wire serial interface)
  • Operating Voltage: 2.7V to 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Write Endurance: 10 trillion (10^13) read/write cycles
  • Data Retention: 10 years (at 85°C)
  • Access Time: 400 kHz (Standard I²C speed)
  • Package: 8-pin SOP (Small Outline Package)

Descriptions:

  • The MB85RC64V is a high-reliability, low-power FRAM that combines the benefits of RAM (fast read/write) and non-volatile memory (data retention without power).
  • It uses a ferroelectric process for data storage, eliminating the need for a battery backup.
  • The I²C interface ensures easy integration with microcontrollers and other digital systems.

Features:

  • Fast Write Performance: No write delays (unlike Flash/EEPROM).
  • High Endurance: Supports 10 trillion read/write cycles.
  • Low Power Consumption: Ideal for battery-powered applications.
  • No Pre-erase Requirement: Direct overwrite capability.
  • Industrial-Grade Reliability: Operates in harsh environments (-40°C to +85°C).

This FRAM is commonly used in applications requiring frequent data writes, such as industrial systems, metering, automotive, and IoT devices.

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