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13001S Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
13001SHF485Yes

13001S** is a high-voltage NPN bipolar junction transistor (BJT) manufactured by **HF (Hangzhou Youwang Electronics Co.

The 13001S is a high-voltage NPN bipolar junction transistor (BJT) manufactured by HF (Hangzhou Youwang Electronics Co., Ltd.).

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCEO): 400V
  • Collector-Base Voltage (VCBO): 500V
  • Emitter-Base Voltage (VEBO): 7V
  • Collector Current (IC): 1.5A
  • Peak Collector Current (ICM): 3A
  • Power Dissipation (PD): 25W (at 25°C)
  • DC Current Gain (hFE): 8-40
  • Transition Frequency (fT): 5MHz
  • Operating Temperature: -55°C to +150°C
  • Package: TO-92

Descriptions:

  • Designed for high-voltage switching applications.
  • Commonly used in power supplies, inverters, and electronic ballasts.
  • Low saturation voltage for efficient switching.

Features:

  • High breakdown voltage (400V).
  • Fast switching speed.
  • Robust construction for reliability.
  • Suitable for low to medium power applications.

This transistor is often used as a replacement for similar devices like the 13001 or 13003 in power circuits.

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