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2SA781K Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA781KHIT230Yes

2SA781K** is a PNP bipolar junction transistor (BJT) manufactured by **HIT (Hitachi)**.

The 2SA781K is a PNP bipolar junction transistor (BJT) manufactured by HIT (Hitachi). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Power Dissipation (PC): 1W
  • DC Current Gain (hFE): 60 - 320 (depending on operating conditions)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-92 (plastic-encapsulated)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low to medium power circuits.
  • Commonly used in audio amplifiers, signal processing, and driver stages.

Features:

  • High current gain (hFE) range.
  • Low saturation voltage.
  • Compact TO-92 package for easy PCB mounting.

For exact performance characteristics, refer to the HIT (Hitachi) datasheet for the 2SA781K.

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