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2SC1162 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC1162HIT100Yes

2SC1162** is a high-frequency NPN silicon transistor manufactured by **HIT (Hitachi)**.

The 2SC1162 is a high-frequency NPN silicon transistor manufactured by HIT (Hitachi). Below are its specifications, descriptions, and features:

Manufacturer: HIT (Hitachi)

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCBO): 50V
  • Maximum Collector-Emitter Voltage (VCEO): 50V
  • Maximum Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (PC): 300mW
  • Transition Frequency (fT): 200MHz
  • DC Current Gain (hFE): 60 ~ 320
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • The 2SC1162 is a general-purpose high-frequency transistor designed for amplification and switching applications.
  • It is housed in a TO-92 package, making it suitable for compact circuit designs.
  • Commonly used in RF amplifiers, oscillators, and signal processing circuits.

Features:

  • High Transition Frequency (fT): 200MHz for efficient high-frequency operation.
  • Low Noise: Suitable for sensitive signal amplification.
  • Wide hFE Range: Provides flexibility in circuit design.
  • Compact TO-92 Package: Easy to integrate into various electronic circuits.

This transistor is now obsolete but may still be found in legacy equipment or as replacements in older designs.

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