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4AM12 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
4AM12HIT310Yes

4AM12** is a PNP bipolar junction transistor (BJT) manufactured by **HIT (Haitian Semiconductor)**.

The 4AM12 is a PNP bipolar junction transistor (BJT) manufactured by HIT (Haitian Semiconductor). Below are its specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -30V
  • Collector-Emitter Voltage (VCEO): -25V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Power Dissipation (PD): 1W
  • DC Current Gain (hFE): 60-320 (varies with conditions)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-92

Descriptions:

  • The 4AM12 is a general-purpose PNP transistor designed for amplification and switching applications.
  • It is commonly used in low-power circuits, signal amplification, and driver stages.
  • The TO-92 package makes it suitable for through-hole PCB mounting.

Features:

  • High current gain (hFE) range for improved linearity.
  • Low saturation voltage for efficient switching.
  • Compact and cost-effective package.
  • Suitable for consumer electronics, audio amplifiers, and control circuits.

For exact performance characteristics, refer to the HIT datasheet for the 4AM12 transistor.

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