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2SA1030 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1030HIT500Yes

2SA1030** is a PNP bipolar junction transistor (BJT) manufactured by **HIT (Hitachi)**.

The 2SA1030 is a PNP bipolar junction transistor (BJT) manufactured by HIT (Hitachi). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): –50V
  • Maximum Collector-Emitter Voltage (VCEO): –50V
  • Maximum Emitter-Base Voltage (VEBO): –5V
  • Collector Current (IC): –2A
  • Power Dissipation (PC): 1W
  • DC Current Gain (hFE): 60–320 (varies with operating conditions)
  • Transition Frequency (fT): 100MHz
  • Operating Temperature Range: –55°C to +150°C

Descriptions:

  • The 2SA1030 is a high-voltage, medium-power PNP transistor designed for general-purpose amplification and switching applications.
  • It is housed in a TO-92 package, making it suitable for compact circuit designs.
  • Commonly used in audio amplifiers, power regulators, and driver circuits.

Features:

  • High Voltage Capability (up to –50V)
  • Moderate Current Handling (2A)
  • Good Frequency Response (fT = 100MHz)
  • Wide hFE Range for flexible circuit design
  • Low Saturation Voltage for efficient switching

This transistor is often paired with complementary NPN transistors like the 2SC2383 in push-pull amplifier circuits.

*(Note: Always refer to the official datasheet for precise performance characteristics under specific conditions.)*

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