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2SB561C Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB561CHIT672Yes

2SB561C** is a PNP bipolar junction transistor (BJT) manufactured by **HIT (Hitachi)**.

The 2SB561C is a PNP bipolar junction transistor (BJT) manufactured by HIT (Hitachi). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): -60V
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Power Dissipation (PC): 25W
  • DC Current Gain (hFE): 60 to 320 (depending on operating conditions)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220

Descriptions:

  • The 2SB561C is a high-power PNP transistor designed for general-purpose amplification and switching applications.
  • It is commonly used in power supply circuits, audio amplifiers, and motor control systems.
  • The TO-220 package provides efficient heat dissipation, making it suitable for medium to high-power applications.

Features:

  • High current capability (up to 3A).
  • Low saturation voltage, ensuring efficient switching performance.
  • Wide range of DC current gain (hFE) for flexibility in circuit design.
  • Robust construction for reliable performance in demanding environments.

This transistor is an older model, so availability may vary. Always refer to the official datasheet for detailed electrical characteristics and application guidelines.

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