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2SB840 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB840HIT600Yes

2SB840** is a PNP bipolar junction transistor (BJT) manufactured by **HIT (Hitachi)**.

The 2SB840 is a PNP bipolar junction transistor (BJT) manufactured by HIT (Hitachi). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -60V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Power Dissipation (PC): 25W
  • DC Current Gain (hFE): 60-320 (at IC = 1A, VCE = -5V)
  • Transition Frequency (fT): 20MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220

Description:

The 2SB840 is a high-power PNP transistor designed for general-purpose amplification and switching applications. It is commonly used in audio amplifiers, power regulators, and motor control circuits due to its high current and voltage handling capabilities.

Features:

  • High current and power dissipation capability
  • Low saturation voltage
  • Complementary NPN pair: 2SD1070
  • Suitable for linear and switching applications

This transistor is now obsolete, but equivalent replacements may be available from other manufacturers.

Would you like additional details on pin configuration or applications?

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