Professional IC Distribution & Technical Solutions

The 2SC1890E is a high-frequency, low-noise NPN bipolar junction transistor (BJT) manufactured by HIT (Hitachi). Below are its key specifications, descriptions, and features:

Specifications:

• Transistor Type: NPN
• Material: Silicon (Si)
• Maximum Collector-Base Voltage (Vcb): 30V
• Maximum Collector-Emitter Voltage (Vce): 20V
• Maximum Emitter-Base Voltage (Veb): 3V
• Maximum Collector Current (Ic): 50mA
• Power Dissipation (Pc): 300mW
• Transition Frequency (ft): 600MHz (min)
• Noise Figure (NF): 1.5dB (typical) at 100MHz
• DC Current Gain (hFE): 30–200 (depending on operating conditions)
• Operating Temperature Range: -55°C to +125°C

Descriptions:

• Designed for high-frequency amplification in RF and VHF applications.
• Optimized for low-noise performance, making it suitable for sensitive signal processing.
• Commonly used in RF amplifiers, oscillators, and mixer circuits.
• Available in TO-92 package for easy PCB mounting.

Features:

• Low noise figure for improved signal clarity.
• High transition frequency (ft) for stable high-frequency operation.
• Reliable performance in RF and communication circuits.
• Compact and widely compatible with standard circuit designs.

This transistor is ideal for applications requiring low-noise amplification in the VHF/UHF range, such as radio receivers and communication systems.

Would you like additional details on pin configuration or equivalent alternatives?