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2SC2309 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2309HIT500Yes

2SC2309** is a high-frequency NPN transistor manufactured by **HIT (Hitachi)**.

The 2SC2309 is a high-frequency NPN transistor manufactured by HIT (Hitachi). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (Vcb): 30V
  • Maximum Collector-Emitter Voltage (Vce): 20V
  • Maximum Emitter-Base Voltage (Veb): 5V
  • Maximum Collector Current (Ic): 50mA
  • Power Dissipation (Pc): 200mW
  • Transition Frequency (fT): 600MHz (min)
  • Noise Figure (NF): 3dB (typical at 1GHz)
  • Gain Bandwidth Product (GBP): High (suitable for RF applications)
  • Operating Temperature Range: -55°C to +125°C

Description:

The 2SC2309 is a silicon epitaxial planar NPN transistor designed for high-frequency amplification in VHF/UHF applications. It is commonly used in RF amplifiers, oscillators, and mixer circuits due to its low noise and high transition frequency.

Features:

  • High fT (600MHz min) for RF applications
  • Low noise figure (3dB typical at 1GHz)
  • Suitable for small-signal amplification
  • Compact package (TO-92 or similar)
  • Reliable performance in RF circuits

This transistor is often used in communication devices, radio receivers, and other high-frequency circuits. For exact performance characteristics, refer to the official Hitachi datasheet.

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