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2SD788 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD788HIT148Yes

2SD788** is a silicon NPN epitaxial planar transistor manufactured by **Hitachi (HIT)**.

The 2SD788 is a silicon NPN epitaxial planar transistor manufactured by Hitachi (HIT). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Material: Silicon (Si)
  • Maximum Collector-Base Voltage (VCB): 60V
  • Maximum Collector-Emitter Voltage (VCE): 50V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Collector Current (IC): 3A
  • Total Power Dissipation (Ptot): 30W
  • Junction Temperature (Tj): 150°C
  • DC Current Gain (hFE): 60 to 320 (at IC = 1A, VCE = 5V)
  • Transition Frequency (fT): 10MHz (typical)

Description:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for medium-power applications due to its high current and voltage ratings.
  • Features a TO-220 package for efficient heat dissipation.

Features:

  • High current capability (up to 3A).
  • Low saturation voltage for improved efficiency in switching applications.
  • Complementary PNP pair: 2SB738 (if used in push-pull configurations).
  • Robust construction for reliable performance in various circuits.

This transistor is commonly used in audio amplifiers, power regulators, and motor control circuits.

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