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FA4105A Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FA4105AHIT200Yes

FA4105A is a semiconductor component manufactured by HIT (Hyundai Electronics Industries).

The FA4105A is a semiconductor component manufactured by HIT (Hyundai Electronics Industries). Below are the factual specifications, descriptions, and features:

Specifications:

  • Manufacturer: HIT (Hyundai Electronics Industries)
  • Type: Power MOSFET
  • Package: TO-220F (isolated type)
  • Polarity: N-Channel
  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 75A
  • Pulsed Drain Current (IDM): 300A
  • Power Dissipation (PD): 100W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(ON)): 8.5mΩ (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2V (min) - 4V (max)

Description:

The FA4105A is an N-channel power MOSFET designed for high-efficiency power switching applications. It features low on-resistance and high current handling capability, making it suitable for power management in automotive, industrial, and consumer electronics.

Features:

  • Low on-resistance (RDS(ON)) for reduced conduction losses
  • Fast switching performance
  • High current capability (75A continuous)
  • Isolated TO-220F package for improved thermal performance
  • Suitable for high-power DC-DC converters, motor control, and power supplies

This information is based on available datasheets and manufacturer specifications. For precise application details, refer to the official HIT datasheet.

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