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HG61H06B33P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
HG61H06B33PHIT2689Yes

Manufacturer:** HIT (Hitachi) **Part Number:** HG61H06B33P ### **Specifications:** - **Type:** IGBT (Insulated Gate Bipolar Transistor) Module - **Voltage Rating:** 600V - **Current Rating:** 75A (collector current) - **Configuration:** Du

Manufacturer: HIT (Hitachi)

Part Number: HG61H06B33P

Specifications:

  • Type: IGBT (Insulated Gate Bipolar Transistor) Module
  • Voltage Rating: 600V
  • Current Rating: 75A (collector current)
  • Configuration: Dual IGBT with anti-parallel diode
  • Package Type: Module (isolated base)
  • Switching Frequency: High-speed switching capability
  • Operating Temperature Range: -40°C to +150°C
  • Mounting Style: Screw or pressure contact

Descriptions:

The HG61H06B33P is a high-power IGBT module designed for industrial and automotive applications requiring efficient switching and high current handling. It integrates two IGBTs with freewheeling diodes, providing reliable performance in motor drives, inverters, and power converters.

Features:

  • Low saturation voltage (VCE(sat)) for reduced power loss
  • Built-in fast recovery diodes for improved efficiency
  • High isolation voltage for safety and reliability
  • Robust construction for industrial environments
  • Suitable for high-frequency switching applications

This module is commonly used in power electronics systems where high efficiency and thermal stability are critical.

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