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HM514800CLZ8 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
HM514800CLZ8HIT113Yes

Manufacturer:** HIT **Part Number:** HM514800CLZ8 ### **Specifications:** - **Type:** DRAM (Dynamic Random-Access Memory) - **Density:** 512Mb (64M x 8) - **Organization:** 64M words × 8 bits - **Voltage:** 3.

Manufacturer: HIT

Part Number: HM514800CLZ8

Specifications:

  • Type: DRAM (Dynamic Random-Access Memory)
  • Density: 512Mb (64M x 8)
  • Organization: 64M words × 8 bits
  • Voltage: 3.3V ± 0.3V
  • Speed: Standard (exact speed grade may vary; check datasheet for specifics)
  • Package: TSOP (Thin Small Outline Package)
  • Interface: Parallel
  • Refresh: 8K refresh cycles / 64ms
  • Operating Temperature Range: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C) depending on variant

Descriptions:

The HM514800CLZ8 is a 512Mb (64M × 8) high-speed CMOS DRAM module designed for applications requiring high-density memory. It operates at 3.3V and features a standard parallel interface, making it suitable for embedded systems, networking, and industrial applications.

Features:

  • High-Speed Operation: Optimized for performance in data-intensive applications.
  • Low Power Consumption: Designed for efficiency with 3.3V operation.
  • Wide Temperature Range: Available in commercial and industrial-grade variants.
  • Reliable Refresh Mechanism: Supports 8K refresh cycles within 64ms.
  • Industry-Standard Package: TSOP form factor for easy integration.

For exact timing parameters and additional details, refer to the official HIT datasheet.

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