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The 03N50C3 is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features:

Specifications:

• Manufacturer: Infineon Technologies
• Part Number: 03N50C3
• Type: N-Channel MOSFET
• Drain-Source Voltage (V_DS): 500V
• Continuous Drain Current (I_D): 3A
• Pulsed Drain Current (I_DM): 12A
• Power Dissipation (P_D): 42W
• Gate-Source Voltage (V_GS): ±30V
• On-Resistance (R_DS(on)): 2.8Ω (max) @ V_GS = 10V
• Threshold Voltage (V_GS(th)): 3V (typical)
• Input Capacitance (C_iss): 300pF (typical)
• Output Capacitance (C_oss): 45pF (typical)
• Reverse Transfer Capacitance (C_rss): 10pF (typical)
• Turn-On Delay Time (t_d(on)): 10ns (typical)
• Turn-Off Delay Time (t_d(off)): 35ns (typical)
• Operating Temperature Range: -55°C to +150°C
• Package: TO-220

Description:

The 03N50C3 is a high-voltage N-Channel MOSFET designed for switching applications. It offers low on-state resistance and fast switching performance, making it suitable for power supplies, motor control, and other high-voltage applications.

Features:

• High Voltage Capability (500V)
• Low Gate Charge
• Fast Switching Speed
• Low On-Resistance (R_DS(on))
• Avalanche Energy Specified
• Improved dv/dt Capability
• TO-220 Package for Easy Mounting

This information is based on Infineon's datasheet for the 03N50C3 MOSFET. For detailed performance characteristics, refer to the official documentation.