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03N60S5 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
03N60S5INFINEON164Yes

03N60S5** is a power MOSFET manufactured by **Infineon Technologies**.

The 03N60S5 is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): 600 V
  • Continuous Drain Current (ID): 3 A
  • Pulsed Drain Current (IDM): 12 A
  • Power Dissipation (Ptot): 38 W
  • Gate-Source Voltage (VGS): ±20 V
  • On-Resistance (RDS(on)): 2.5 Ω (max) @ VGS = 10 V
  • Threshold Voltage (VGS(th)): 3 V (min), 5 V (max)
  • Input Capacitance (Ciss): 250 pF (typ)
  • Output Capacitance (Coss): 30 pF (typ)
  • Reverse Transfer Capacitance (Crss): 10 pF (typ)
  • Turn-On Delay Time (td(on)): 10 ns (typ)
  • Turn-Off Delay Time (td(off)): 40 ns (typ)
  • Operating Temperature Range: -55°C to +150°C

Package:

  • TO-252 (DPAK)

Descriptions & Features:

  • High Voltage MOSFET: Designed for high-voltage switching applications.
  • Low Gate Charge: Ensures fast switching performance.
  • Low On-Resistance: Improves efficiency in power applications.
  • Avalanche Rugged: Capable of handling high-energy avalanche conditions.
  • Optimized for Switching Applications: Suitable for SMPS, motor control, and other power conversion circuits.
  • Lead-Free & RoHS Compliant: Environmentally friendly.

This MOSFET is commonly used in power supplies, inverters, and industrial applications where high voltage and efficient switching are required.

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