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BAS70E6327 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BAS70E6327INFINEON1000Yes

BAS70E6327** is a high-speed switching diode manufactured by **Infineon Technologies**.

The BAS70E6327 is a high-speed switching diode manufactured by Infineon Technologies. Below are its specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Diode Type: Dual series-connected Schottky diode
  • Package: SOT-23 (Small Outline Transistor)
  • Maximum Reverse Voltage (VR): 70 V
  • Average Rectified Forward Current (IO): 70 mA
  • Peak Forward Surge Current (IFSM): 1 A
  • Forward Voltage (VF): 0.38 V (at 1 mA), 0.715 V (at 15 mA)
  • Reverse Leakage Current (IR): 0.2 µA (at 20 V), 5 µA (at 70 V)
  • Junction Capacitance (Cj): 2 pF (at 0 V, 1 MHz)
  • Operating Temperature Range: -65°C to +150°C

Descriptions:

  • Designed for high-speed switching applications.
  • Low forward voltage drop ensures efficient performance.
  • Suitable for general-purpose rectification, signal detection, and clamping.
  • RoHS compliant and halogen-free.

Features:

  • High switching speed
  • Low power loss
  • Small footprint (SOT-23 package)
  • Dual-diode configuration for space-saving designs
  • High reliability and performance

This diode is commonly used in power supplies, signal processing, and RF applications where fast switching and low leakage are critical.

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