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BCR521E6327 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BCR521E6327INFINEON1000Yes

BCR521E6327** is a PNP transistor manufactured by **Infineon Technologies**.

The BCR521E6327 is a PNP transistor manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (V_CBO): -50 V
  • Maximum Collector-Emitter Voltage (V_CEO): -50 V
  • Maximum Emitter-Base Voltage (V_EBO): -5 V
  • Continuous Collector Current (I_C): -500 mA
  • Power Dissipation (P_tot): 1 W
  • Junction Temperature (T_j): 150 °C
  • DC Current Gain (h_FE): 100 to 600 (at I_C = -100 mA, V_CE = -5 V)
  • Transition Frequency (f_T): 100 MHz (typical)
  • Package: SOT-23 (3-pin)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-power circuits due to its compact SOT-23 package.
  • Features high current gain and fast switching performance.

Features:

  • Low Saturation Voltage: Ensures efficient switching.
  • High Current Gain (h_FE): Provides good signal amplification.
  • Compact SOT-23 Package: Ideal for space-constrained designs.
  • RoHS Compliant: Environmentally friendly.

This transistor is commonly used in amplifiers, drivers, and switching circuits in consumer electronics, automotive, and industrial applications.

For detailed datasheets, refer to Infineon's official documentation.

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