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Manufacturer: INFINEON

Part Number: BSC010N04LS

Specifications:

• Transistor Type: N-Channel MOSFET
• Technology: OptiMOS™
• Drain-Source Voltage (VDS): 40 V
• Continuous Drain Current (ID): 100 A
• Pulsed Drain Current (IDM): 400 A
• Power Dissipation (PD): 125 W
• Gate-Source Voltage (VGS): ±20 V
• On-Resistance (RDS(on)): 1.0 mΩ (max) at VGS = 10 V
• Total Gate Charge (Qg): 60 nC (typ)
• Input Capacitance (Ciss): 3500 pF (typ)
• Operating Temperature Range: -55°C to +175°C
• Package: TO-263 (D2PAK)

Descriptions:

The BSC010N04LS is a high-performance N-Channel MOSFET from Infineon’s OptiMOS™ family, designed for low-voltage applications requiring high efficiency and power density. It features ultra-low on-resistance (RDS(on)) and fast switching characteristics, making it suitable for power management, DC-DC converters, and motor control applications.

Features:

• Low RDS(on): Minimizes conduction losses
• High Current Capability: Supports up to 100 A continuous current
• Fast Switching: Optimized for high-frequency applications
• Robust Design: High thermal performance and reliability
• AEC-Q101 Qualified: Suitable for automotive applications
• Lead-Free & RoHS Compliant: Environmentally friendly

This MOSFET is ideal for demanding power electronics applications where efficiency and thermal performance are critical.