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BSC010N04LS Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BSC010N04LSINFINEON 4000Yes

Manufacturer:** INFINEON **Part Number:** BSC010N04LS ### **Specifications:** - **Transistor Type:** N-Channel MOSFET - **Technology:** OptiMOS™ - **Drain-Source Voltage (VDS):** 40 V - **Continuous Drain Current (ID):** 100 A - **Pulsed

Manufacturer: INFINEON

Part Number: BSC010N04LS

Specifications:

  • Transistor Type: N-Channel MOSFET
  • Technology: OptiMOS™
  • Drain-Source Voltage (VDS): 40 V
  • Continuous Drain Current (ID): 100 A
  • Pulsed Drain Current (IDM): 400 A
  • Power Dissipation (PD): 125 W
  • Gate-Source Voltage (VGS): ±20 V
  • On-Resistance (RDS(on)): 1.0 mΩ (max) at VGS = 10 V
  • Total Gate Charge (Qg): 60 nC (typ)
  • Input Capacitance (Ciss): 3500 pF (typ)
  • Operating Temperature Range: -55°C to +175°C
  • Package: TO-263 (D2PAK)

Descriptions:

The BSC010N04LS is a high-performance N-Channel MOSFET from Infineon’s OptiMOS™ family, designed for low-voltage applications requiring high efficiency and power density. It features ultra-low on-resistance (RDS(on)) and fast switching characteristics, making it suitable for power management, DC-DC converters, and motor control applications.

Features:

  • Low RDS(on): Minimizes conduction losses
  • High Current Capability: Supports up to 100 A continuous current
  • Fast Switching: Optimized for high-frequency applications
  • Robust Design: High thermal performance and reliability
  • AEC-Q101 Qualified: Suitable for automotive applications
  • Lead-Free & RoHS Compliant: Environmentally friendly

This MOSFET is ideal for demanding power electronics applications where efficiency and thermal performance are critical.

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