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BSC060N10NS3G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BSC060N10NS3GINFINEON4800Yes

BSC060N10NS3G** is a power MOSFET manufactured by **Infineon Technologies**.

The BSC060N10NS3G is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Type: N-Channel Power MOSFET
  • Technology: OptiMOS™ 3
  • Drain-Source Voltage (VDS): 100 V
  • Continuous Drain Current (ID): 60 A (at 25°C)
  • Pulsed Drain Current (IDM): 240 A
  • RDS(on) (Max): 6.0 mΩ (at VGS = 10 V)
  • Gate-Source Voltage (VGS): ±20 V
  • Power Dissipation (PD): 200 W
  • Operating Junction Temperature (TJ): -55°C to +175°C
  • Package: TO-263 (D2PAK)
  • Mounting Type: Surface Mount

Descriptions:

The BSC060N10NS3G is a high-performance N-channel MOSFET designed for power management applications. It features low on-state resistance (RDS(on)) and high current handling capability, making it suitable for switching applications in power supplies, motor control, and DC-DC converters.

Features:

  • Low RDS(on): Ensures minimal conduction losses.
  • High Current Capability: Supports up to 60 A continuous drain current.
  • Fast Switching: Optimized for high-frequency applications.
  • Avalanche Rated: Robust against high-energy transients.
  • Lead-Free & RoHS Compliant: Environmentally friendly.
  • Optimized for Efficiency: Ideal for synchronous rectification.

This MOSFET is part of Infineon’s OptiMOS™ 3 family, which is known for high efficiency and reliability in power conversion systems.

(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)

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