Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > INFINEON > BSC067N06LS3G

BSC067N06LS3G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BSC067N06LS3GINFINEON5000Yes

BSC067N06LS3G** is a power MOSFET manufactured by **Infineon Technologies**.

The BSC067N06LS3G is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Type: N-Channel Power MOSFET
  • Technology: OptiMOS™ 3
  • Drain-Source Voltage (VDS): 60 V
  • Continuous Drain Current (ID): 67 A (at 25°C)
  • Pulsed Drain Current (IDM): 270 A
  • RDS(on) (Max): 6.7 mΩ (at VGS = 10 V)
  • Gate-Source Voltage (VGS): ±20 V
  • Power Dissipation (PD): 125 W (at 25°C)
  • Operating Junction Temperature (TJ): -55°C to +175°C
  • Package: TO-263 (D2PAK)
  • Mounting Type: Surface Mount

Descriptions:

  • Designed for high-efficiency power switching applications.
  • Low on-state resistance (RDS(on)) for reduced conduction losses.
  • Optimized for high current handling and fast switching performance.
  • Suitable for DC-DC converters, motor control, and power management applications.

Features:

  • Low RDS(on): Enhances efficiency in power conversion.
  • Fast Switching: Minimizes switching losses.
  • High Current Capability: Supports high-load applications.
  • Robust Thermal Performance: TO-263 package ensures effective heat dissipation.
  • Avalanche Rated: Provides ruggedness in harsh conditions.

This MOSFET is ideal for applications requiring high power density and efficiency.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • IRF7341TRPBF ,8000,SOIC-8ECCN: EAR99

    IRF7341TRPBF** is a dual N-channel and P-channel MOSFET manufactured by **Infineon Technologies**.

  • FM25VN10-G ,176,SOP-8

    FM25VN10-G** is a **1Mbit (128K x 8) Serial (SPI) F-RAM** memory device manufactured by **Infineon Technologies**.

  • IR2110STRPBF ,6000,SOIC-16ECCN: EAR99

    High and Low Side Driver, All High Voltage Pins On One Side, Separate Logic and Power Ground, Shut-Down

  • M5818C1,ALI,51,DIP24

    S2VB40,SHINDENG,51,DIP

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales