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BSZ075N08NS5 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BSZ075N08NS5INFINEON5000Yes

BSZ075N08NS5** is a power MOSFET manufactured by **Infineon Technologies**.

The BSZ075N08NS5 is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Type: N-Channel Power MOSFET
  • Technology: OptiMOS™ 5
  • Drain-Source Voltage (VDS): 80 V
  • Continuous Drain Current (ID): 75 A
  • Pulsed Drain Current (IDM): 300 A
  • RDS(on) (Max): 7.5 mΩ (at VGS = 10 V)
  • Gate-Source Voltage (VGS): ±20 V
  • Power Dissipation (PD): 125 W
  • Operating Junction Temperature (TJ): -55°C to +175°C
  • Package: PG-TDSON-8 (5x6)
  • Mounting Type: Surface Mount

Descriptions:

  • Designed for high-efficiency power switching applications.
  • Part of Infineon’s OptiMOS™ 5 family, optimized for low conduction and switching losses.
  • Suitable for synchronous rectification, DC-DC converters, motor control, and power management in automotive and industrial applications.

Features:

  • Low RDS(on) for reduced conduction losses.
  • High current capability (75 A continuous).
  • Fast switching performance for improved efficiency.
  • Optimized for 12V and 24V systems.
  • AEC-Q101 qualified (for automotive applications).
  • Lead-free and RoHS compliant.

For detailed datasheets and application notes, refer to Infineon’s official documentation.

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