Professional IC Distribution & Technical Solutions

The CY7C1041GN30-10ZSXIT is a high-performance CMOS static RAM (SRAM) manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

• Memory Type: Static RAM (SRAM)
• Density: 4 Mbit (512K × 8-bit)
• Supply Voltage: 3.0V to 3.6V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Package: 44-pin TSOP-II (Thin Small Outline Package)
• Interface: Parallel
• Organization: 512K × 8
• Standby Current (Typical): 3 mA (TTL level)
• Active Current (Typical): 55 mA (at 10 ns cycle time)
• Data Retention Voltage: 2.0V (min)
• Pin Count: 44

Descriptions:

• The CY7C1041GN30-10ZSXIT is a high-speed, low-power SRAM designed for applications requiring fast data access.
• It features a fully static memory array, meaning no refresh cycles are required.
• The device supports asynchronous operation, allowing easy interfacing with microprocessors and microcontrollers.
• It is TTL-compatible with three-state outputs.

Features:

• High-speed access time: 10 ns
• Low power consumption:
• Active current: 55 mA (typical)
• Standby current: 3 mA (TTL level)
• Wide voltage range: 3.0V to 3.6V operation
• Automatic power-down when deselected
• CMOS technology for high performance and low power
• Industrial temperature range (-40°C to +85°C)
• Lead-free and RoHS compliant

This SRAM is commonly used in networking, telecommunications, industrial control systems, and embedded applications where fast, reliable memory access is required.

(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)