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IPT012N08N5ATMA1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IPT012N08N5ATMA1INFINEON 2000Yes

IPT012N08N5ATMA1** is a power MOSFET manufactured by **Infineon Technologies**.

The IPT012N08N5ATMA1 is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Part Number: IPT012N08N5ATMA1
  • Transistor Type: N-Channel MOSFET
  • Technology: OptiMOS™ 5
  • Drain-Source Voltage (VDS): 80 V
  • Continuous Drain Current (ID): 120 A (at 25°C)
  • Pulsed Drain Current (IDM): 480 A
  • RDS(on) (Max): 1.2 mΩ (at VGS = 10 V)
  • Gate-Source Voltage (VGS): ±20 V
  • Power Dissipation (PD): 375 W
  • Operating Junction Temperature (TJ): -55°C to +175°C
  • Package: TO-Leadless (TOLL), 8-pin
  • Mounting Type: Surface Mount

Descriptions:

  • Designed for high-efficiency power switching applications.
  • Part of Infineon’s OptiMOS™ 5 family, optimized for low conduction and switching losses.
  • Suitable for automotive, industrial, and power supply applications.

Features:

  • Ultra-low RDS(on) for reduced conduction losses.
  • High current capability for demanding power applications.
  • Optimized for fast switching in synchronous rectification and DC-DC converters.
  • AEC-Q101 qualified for automotive applications.
  • Leadless TOLL package for improved thermal performance and space-saving design.

For detailed datasheets and application notes, refer to Infineon’s official documentation.

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