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IRF3710PBF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRF3710PBFINFINEON18000Yes

HEXFET Power MOSFET

The IRF3710PBF is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Part Number: IRF3710PBF
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 100V
  • Continuous Drain Current (ID): 57A (at 25°C)
  • Pulsed Drain Current (IDM): 230A
  • Power Dissipation (PD): 200W (at 25°C)
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 23mΩ (at VGS = 10V, ID = 28A)
  • Threshold Voltage (VGS(th)): 2-4V
  • Input Capacitance (Ciss): 3300pF
  • Output Capacitance (Coss): 600pF
  • Reverse Transfer Capacitance (Crss): 150pF
  • Turn-On Delay Time (td(on)): 13ns
  • Rise Time (tr): 60ns
  • Turn-Off Delay Time (td(off)): 50ns
  • Fall Time (tf): 25ns
  • Operating Junction Temperature (TJ): -55°C to +175°C
  • Package: TO-220AB

Descriptions:

  • The IRF3710PBF is a high-current, low-on-resistance N-channel MOSFET designed for power switching applications.
  • It is optimized for high efficiency and fast switching performance in power supplies, motor control, and DC-DC converters.
  • The TO-220AB package provides good thermal dissipation characteristics.

Features:

  • Low On-Resistance: Ensures minimal conduction losses.
  • High Current Handling: Capable of handling up to 57A continuous current.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • Avalanche Energy Rated: Provides robustness in inductive load conditions.
  • Lead-Free & RoHS Compliant: Environmentally friendly manufacturing.

This MOSFET is commonly used in power management, automotive, and industrial applications.

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