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IRF7313TRPBF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRF7313TRPBFINFINEON10394Yes

30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

The IRF7313TRPBF is a dual N-channel and P-channel MOSFET manufactured by Infineon Technologies.

Specifications:

  • Manufacturer: Infineon Technologies
  • Configuration: Dual MOSFET (1 N-Channel + 1 P-Channel)
  • Drain-Source Voltage (VDS):
  • N-Channel: 55V
  • P-Channel: -55V
  • Continuous Drain Current (ID):
  • N-Channel: 4.4A
  • P-Channel: -3.8A
  • RDS(on) (Max @ VGS = 10V):
  • N-Channel: 0.11Ω
  • P-Channel: 0.19Ω
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 2W
  • Package: SOIC-8
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The IRF7313TRPBF is a dual MOSFET in a single package, combining an N-channel and a P-channel MOSFET. It is designed for high-efficiency power switching applications, providing low on-resistance and fast switching performance.

Features:

  • Dual MOSFET in a single package
  • Low gate charge
  • Fast switching speed
  • Low RDS(on) for reduced conduction losses
  • Avalanche rugged design
  • Lead-free and RoHS compliant

This MOSFET is commonly used in power management, DC-DC converters, motor control, and other switching applications.

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