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IRF9530NPBF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRF9530NPBFINFINEON27720Yes

IRF9530NPBF is a P-channel Power MOSFET manufactured by Infineon Technologies.

The IRF9530NPBF is a P-channel Power MOSFET manufactured by Infineon Technologies.

Specifications:

  • Drain-Source Voltage (VDS): -100V
  • Continuous Drain Current (ID): -12A
  • Pulsed Drain Current (IDM): -48A
  • Power Dissipation (PD): 88W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.30Ω (max) at VGS = -10V
  • Threshold Voltage (VGS(th)): -2V to -4V
  • Input Capacitance (Ciss): 630pF
  • Output Capacitance (Coss): 180pF
  • Reverse Transfer Capacitance (Crss): 60pF
  • Turn-On Delay Time (td(on)): 14ns
  • Rise Time (tr): 60ns
  • Turn-Off Delay Time (td(off)): 50ns
  • Fall Time (tf): 25ns
  • Operating Temperature Range: -55°C to +175°C
  • Package: TO-220AB

Descriptions:

The IRF9530NPBF is a high-voltage P-channel MOSFET designed for power management applications. It features low on-resistance and fast switching performance, making it suitable for switching regulators, motor control, and power amplification.

Features:

  • High voltage capability
  • Low gate charge
  • Fast switching speed
  • Improved dv/dt capability
  • Avalanche ruggedness
  • Lead-free and RoHS compliant

This MOSFET is commonly used in DC-DC converters, power supplies, and other high-efficiency switching applications.

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