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P28F010-200 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
P28F010-200INTEL102Yes

Intel P28F010-200** is a 1 Megabit (128K x 8) CMOS Flash Memory chip.

The Intel P28F010-200 is a 1 Megabit (128K x 8) CMOS Flash Memory chip. Below are its key specifications, descriptions, and features:

Specifications:

  • Memory Size: 1 Megabit (128K x 8)
  • Technology: CMOS Flash Memory
  • Access Time: 200 ns
  • Operating Voltage: 5V ± 10%
  • Package Type: 32-pin PLCC (Plastic Leaded Chip Carrier) or 32-pin TSOP (Thin Small Outline Package)
  • Operating Temperature Range: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)
  • Endurance: 100,000 write/erase cycles per sector
  • Data Retention: 10 years minimum

Descriptions:

  • The P28F010-200 is a non-volatile flash memory device, allowing for in-system reprogramming.
  • It supports block erase and byte programming operations.
  • The memory is organized into 16 uniform sectors, each 8 KB in size.
  • It features a command-driven interface for programming and erasing.

Features:

  • High-Speed Read Access: 200 ns maximum access time.
  • Low Power Consumption:
  • Active Read Current: 30 mA (typical)
  • Standby Current: 100 µA (typical)
  • Flexible Sector Architecture: 16 uniform 8 KB sectors for efficient erase and programming.
  • Hardware and Software Data Protection:
  • VPP (Programming Voltage) pin for write protection.
  • Sector lock/unlock capability.
  • Compatibility: JEDEC-standard pinout for easy replacement of EPROMs.
  • Reliable Data Retention: Guaranteed for 10 years or more.

This chip was commonly used in embedded systems, BIOS storage, and other applications requiring reprogrammable non-volatile memory.

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