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IRF830 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRF830IOR117Yes

IRF830 is a power MOSFET manufactured by various semiconductor companies.

The IRF830 is a power MOSFET manufactured by various semiconductor companies. Below are the factual specifications, descriptions, and features based on standard industry data:

Manufacturer:

  • Multiple manufacturers produce the IRF830, including International Rectifier (now part of Infineon Technologies), Vishay, STMicroelectronics, and others.

SEC (Standard Electrical Characteristics) Specifications:

  • Drain-Source Voltage (VDSS): 500V
  • Continuous Drain Current (ID): 4.5A (at 25°C)
  • Pulsed Drain Current (IDM): 18A
  • Power Dissipation (PD): 75W (at 25°C)
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 1.5Ω (at VGS = 10V, ID = 2.2A)
  • Threshold Voltage (VGS(th)): 2-4V
  • Input Capacitance (Ciss): 350pF (typical)
  • Output Capacitance (Coss): 50pF (typical)
  • Reverse Transfer Capacitance (Crss): 10pF (typical)
  • Turn-On Delay Time (td(on)): 10ns (typical)
  • Turn-Off Delay Time (td(off)): 50ns (typical)

Descriptions & Features:

  • Type: N-Channel Power MOSFET
  • Package: TO-220 (through-hole)
  • Technology: HEXFET® (for International Rectifier versions)
  • Applications:
  • Switching power supplies
  • Motor control
  • DC-DC converters
  • Inverters
  • High-voltage switching circuits
  • Key Features:
  • Fast switching speed
  • Low gate charge
  • High voltage capability
  • Avalanche ruggedness
  • Low thermal resistance

The specifications may vary slightly depending on the manufacturer. Always refer to the datasheet for exact values.

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