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IRF6604TR1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRF6604TR1IR300Yes

IRF6604TR1 is a power MOSFET manufactured by Infineon Technologies.

The IRF6604TR1 is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Manufacturer:

Infineon Technologies

Specifications:

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 110A (at 25°C)
  • Pulsed Drain Current (IDM): 440A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 200W (at 25°C)
  • On-Resistance (RDS(on)): 2.4mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) to 2.5V (max)
  • Input Capacitance (Ciss): 4200pF (typ)
  • Output Capacitance (Coss): 1100pF (typ)
  • Reverse Transfer Capacitance (Crss): 390pF (typ)
  • Operating Junction Temperature (TJ): -55°C to +175°C
  • Package: TO-220AB

Description:

The IRF6604TR1 is an N-channel power MOSFET designed for high-current, low-voltage applications. It offers low on-resistance and fast switching performance, making it suitable for power management in DC-DC converters, motor control, and other high-efficiency applications.

Features:

  • Low RDS(on) for reduced conduction losses
  • High current handling capability
  • Fast switching speed
  • Improved dv/dt capability
  • Lead-free and RoHS compliant

This information is based on the manufacturer's datasheet. For detailed performance characteristics, refer to Infineon's official documentation.

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