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IRFZ24N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRFZ24NIR4642Yes

IRFZ24N is a power MOSFET manufactured by International Rectifier (IR).

The IRFZ24N is a power MOSFET manufactured by International Rectifier (IR). Below are the factual details from the Manufactor Datasheet:

Specifications:

  • Drain-Source Voltage (VDSS): 55V
  • Continuous Drain Current (ID): 17A
  • Pulsed Drain Current (IDM): 68A
  • Power Dissipation (PD): 45W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.07Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2-4V
  • Input Capacitance (Ciss): 1300pF
  • Output Capacitance (Coss): 350pF
  • Reverse Transfer Capacitance (Crss): 100pF
  • Turn-On Delay Time (td(on)): 13ns
  • Turn-Off Delay Time (td(off)): 44ns
  • Operating Temperature Range: -55°C to +175°C

Description:

The IRFZ24N is an N-channel power MOSFET designed for high-speed switching applications. It features low on-resistance, fast switching speeds, and high current handling capability, making it suitable for power management in DC-DC converters, motor control, and other high-efficiency applications.

Features:

  • Advanced HEXFET® Technology for low conduction losses.
  • Low Gate Charge for improved switching efficiency.
  • Avalanche Energy Specified for ruggedness in inductive loads.
  • Fully Characterized for Dynamic Performance ensuring reliable operation in high-frequency circuits.
  • Lead-Free & RoHS Compliant for environmental safety.

The IRFZ24N is housed in a TO-220 package for easy mounting and heat dissipation.

(End of factual information.)

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