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IS42S16160J-6BLI Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IS42S16160J-6BLIISSI 1095Yes

IS42S16160J-6BLI** is a synchronous dynamic random-access memory (SDRAM) chip manufactured by **Integrated Silicon Solution Inc.

The IS42S16160J-6BLI is a synchronous dynamic random-access memory (SDRAM) chip manufactured by Integrated Silicon Solution Inc. (ISSI). Below are its key specifications, descriptions, and features:

Specifications:

  • Memory Type: SDRAM
  • Density: 256Mb (16M x 16)
  • Organization: 4 Banks x 4M x 16
  • Voltage: 3.3V
  • Speed: -6 (166MHz clock frequency)
  • Access Time: 5.4ns
  • Refresh: 4096 refresh cycles / 64ms
  • Package: 54-pin TSOP-II
  • Operating Temperature: Commercial (0°C to +70°C)

Descriptions:

  • High-Speed Operation: Supports burst read/write operations with programmable burst lengths (1, 2, 4, 8, or full page).
  • Auto Refresh & Self Refresh: Includes both auto-refresh and power-saving self-refresh modes.
  • Low Power Consumption: Features a standby mode and deep power-down mode for reduced power usage.
  • CAS Latency: Programmable CAS latency (2 or 3).
  • Burst Mode: Sequential or interleaved burst mode options.

Features:

  • Fully synchronous operation with a single 3.3V power supply.
  • Internal pipelined architecture for high-speed data transfer.
  • Automatic precharge and controlled precharge commands.
  • Maskable data input/output (DQ) for byte control.
  • Compliant with JEDEC standards for SDRAM.

This SDRAM is commonly used in networking, telecommunications, and embedded systems requiring high-speed, low-power memory solutions.

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