Professional IC Distribution & Technical Solutions

The 2SA1270 is a PNP silicon transistor manufactured by KEC (Korea Electronics Company). Below are its specifications, descriptions, and features:

Specifications:

• Transistor Type: PNP
• Material: Silicon
• Maximum Collector-Base Voltage (VCBO): -50V
• Maximum Collector-Emitter Voltage (VCEO): -50V
• Maximum Emitter-Base Voltage (VEBO): -5V
• Collector Current (IC): -1A
• Power Dissipation (PD): 1W
• DC Current Gain (hFE): 60-320 (depending on operating conditions)
• Transition Frequency (fT): 100MHz (typical)
• Operating Temperature Range: -55°C to +150°C

Descriptions:

• The 2SA1270 is a high-voltage, medium-power PNP transistor designed for general-purpose amplification and switching applications.
• It is housed in a TO-92 package, making it suitable for compact circuit designs.
• Suitable for use in audio amplifiers, power regulators, and driver circuits.

Features:

• High voltage capability (up to -50V).
• Good current gain linearity across a wide range of collector currents.
• Low saturation voltage, improving efficiency in switching applications.
• Reliable performance in various electronic circuits.

This transistor is commonly used in conjunction with complementary NPN transistors (such as the 2SC3116) in push-pull amplifier configurations.

For exact performance characteristics, always refer to the official KEC datasheet.