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2SC3199GR Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC3199GRKEC600Yes

2SC3199GR** is a high-frequency NPN transistor manufactured by **KEC (Korea Electronics Company)**.

The 2SC3199GR is a high-frequency NPN transistor manufactured by KEC (Korea Electronics Company). Below are the factual specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (Vcb): 30V
  • Maximum Collector-Emitter Voltage (Vce): 25V
  • Maximum Emitter-Base Voltage (Veb): 4V
  • Maximum Collector Current (Ic): 100mA
  • Power Dissipation (Pc): 200mW
  • Transition Frequency (fT): 800MHz (min)
  • Noise Figure (NF): 2dB (typical)
  • DC Current Gain (hFE): 40 ~ 200 (at Vce=6V, Ic=1mA)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (Miniature Surface Mount)

Descriptions:

  • Designed for high-frequency amplification in RF and VHF applications.
  • Suitable for low-noise amplifier (LNA) and oscillator circuits.
  • Compact SOT-23 package, ideal for space-constrained PCB designs.

Features:

  • High transition frequency (fT) for RF applications.
  • Low noise figure for improved signal clarity.
  • High current gain (hFE) for efficient amplification.
  • Small form factor for modern electronics.

This transistor is commonly used in wireless communication, RF amplifiers, and signal processing circuits.

(Note: Always refer to the official KEC datasheet for precise details.)

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