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KIA6067N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
KIA6067NKEC150Yes

Part Number:** KIA6067N **Manufacturer:** KEC (Korea Electronics Company) ### **Specifications:** - **Type:** NPN Silicon Epitaxial Planar Transistor - **Application:** High-speed switching, general-purpose amplification - **Collector-Base Vo

Part Number: KIA6067N

Manufacturer: KEC (Korea Electronics Company)

Specifications:

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Application: High-speed switching, general-purpose amplification
  • Collector-Base Voltage (VCBO): 60V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 1A
  • Total Power Dissipation (PT): 1W (Ta = 25°C)
  • Junction Temperature (Tj): 150°C
  • Transition Frequency (fT): 150MHz (min)
  • DC Current Gain (hFE): 60 ~ 320 (IC = 0.1A, VCE = 1V)

Descriptions:

The KIA6067N is an NPN bipolar junction transistor (BJT) designed for high-speed switching and general amplification applications. It features low saturation voltage and high current gain, making it suitable for driver circuits and signal amplification.

Features:

  • High-speed switching capability
  • Low collector-emitter saturation voltage
  • High current gain (hFE) range
  • Reliable performance in general-purpose circuits
  • TO-92 package for easy PCB mounting

For detailed electrical characteristics and application notes, refer to the official KEC datasheet.

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