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KID65003AF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
KID65003AFKEC4427Yes

Manufacturer:** KEC (Korea Electronics Company) **Part Number:** KID65003AF ### **Specifications:** - **Type:** Power MOSFET - **Channel Type:** N-Channel - **Drain-Source Voltage (VDSS):** 30V - **Continuous Drain Current (I

Manufacturer: KEC (Korea Electronics Company)

Part Number: KID65003AF

Specifications:

  • Type: Power MOSFET
  • Channel Type: N-Channel
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 60A
  • Pulsed Drain Current (IDM): 240A
  • Power Dissipation (PD): 100W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 3.5mΩ (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) - 2.5V (max)
  • Input Capacitance (Ciss): 3000pF (typ)
  • Package: TO-252 (DPAK)

Descriptions:

The KID65003AF is an N-Channel MOSFET designed for high-power switching applications. It offers low on-resistance and high current handling, making it suitable for power management in automotive, industrial, and consumer electronics.

Features:

  • Low RDS(on) for reduced conduction losses
  • High current capability
  • Fast switching performance
  • Improved thermal characteristics
  • RoHS compliant

This MOSFET is commonly used in DC-DC converters, motor control, and battery management systems.

(Note: Always verify datasheet details for exact specifications.)

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