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KID65506P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
KID65506PKEC175Yes

Manufacturer:** KEC (Korea Electronics Co.

Manufacturer: KEC (Korea Electronics Co., Ltd.)

Part Number: KID65506P

Specifications:

  • Type: Power MOSFET
  • Channel Type: N-Channel
  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 65A
  • Pulsed Drain Current (IDM): Higher than continuous rating (exact value depends on conditions)
  • Power Dissipation (PD): Typically around 100W (dependent on heat sinking)
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): Low (specific value depends on VGS, e.g., ~10mΩ at 10V)
  • Package: TO-252 (DPAK) or similar surface-mount package

Descriptions:

  • A high-current N-channel MOSFET designed for power switching applications.
  • Suitable for motor control, power supplies, and DC-DC converters.
  • Low on-resistance for efficient power handling.

Features:

  • High Current Capability: Supports up to 65A continuous drain current.
  • Low RDS(on): Minimizes conduction losses.
  • Fast Switching: Optimized for high-frequency applications.
  • Avalanche Energy Rated: Enhanced ruggedness in inductive load conditions.
  • Surface-Mount Package: Compact and suitable for automated PCB assembly.

For exact values, refer to the official KEC datasheet.

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