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KRC102S-RTK/P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
KRC102S-RTK/PKEC2140Yes

### **KRC102S-RTK/P (Manufacturer: KEC)** #### **Specifications:** - **Type:** NPN Silicon Epitaxial Planar Transistor - **Application:** High-frequency amplification, RF applications - **Collector-Base Voltage (VCBO):** 30V - **Collector-Emitt

KRC102S-RTK/P (Manufacturer: KEC)

#### Specifications:

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Application: High-frequency amplification, RF applications
  • Collector-Base Voltage (VCBO): 30V
  • Collector-Emitter Voltage (VCEO): 20V
  • Emitter-Base Voltage (VEBO): 3V
  • Collector Current (IC): 50mA
  • Total Power Dissipation (PT): 150mW
  • Transition Frequency (fT): 1.5GHz (min)
  • Noise Figure (NF): 3dB (typ) @ 1GHz
  • Operating Temperature Range: -55°C to +125°C
  • Package: SOT-23 (SC-59)

#### Descriptions:

The KRC102S-RTK/P is a high-frequency NPN transistor designed for RF amplification in applications such as VHF/UHF communication systems, wireless modules, and signal processing circuits. It offers low noise and high transition frequency, making it suitable for small-signal amplification.

#### Features:

  • High fT (1.5GHz min) for excellent high-frequency performance
  • Low noise figure (3dB typ @ 1GHz) for improved signal clarity
  • Compact SOT-23 package for space-saving PCB designs
  • Reliable performance across a wide temperature range
  • Suitable for RF amplifiers, oscillators, and mixers

This transistor is commonly used in portable communication devices, wireless modules, and other RF applications requiring stable high-frequency amplification.

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