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2SA8160 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA8160MICRO1000Yes

2SA8160** is a PNP bipolar junction transistor (BJT) manufactured by **MICRO Electronics**.

The 2SA8160 is a PNP bipolar junction transistor (BJT) manufactured by MICRO Electronics. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Collector Dissipation (PC): 25W
  • Junction Temperature (Tj): 150°C
  • DC Current Gain (hFE): 60 to 320 (at IC = 1A, VCE = -5V)
  • Transition Frequency (fT): 30MHz (typical)
  • Package: TO-220

Descriptions:

The 2SA8160 is a high-power PNP transistor designed for general-purpose amplification and switching applications. It offers high current capability and moderate speed performance, making it suitable for audio amplifiers, power regulators, and motor control circuits.

Features:

  • High collector current (-3A)
  • Low saturation voltage for efficient switching
  • High power dissipation (25W)
  • Wide range of DC current gain (hFE)
  • TO-220 package for easy mounting on heat sinks

This transistor is commonly used in power management and amplification circuits where a robust PNP transistor is required.

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