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M53374P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
M53374PMIT123Yes

Manufacturer:** MIT (Microelectronics Technology) **Part Number:** M53374P ### **Specifications:** - **Type:** RF Power Transistor - **Material:** Silicon (Si) - **Package:** TO-220 - **Polarity:** NPN - **Maximum Power Dissipation:** 40

Manufacturer: MIT (Microelectronics Technology)

Part Number: M53374P

Specifications:

  • Type: RF Power Transistor
  • Material: Silicon (Si)
  • Package: TO-220
  • Polarity: NPN
  • Maximum Power Dissipation: 40W
  • Collector-Base Voltage (VCB): 60V
  • Collector-Emitter Voltage (VCE): 60V
  • Emitter-Base Voltage (VEB): 5V
  • Collector Current (IC): 4A
  • Transition Frequency (fT): 175MHz
  • Operating Temperature Range: -55°C to +150°C

Features:

  • High power gain
  • Designed for RF power amplification
  • Suitable for VHF/UHF applications
  • Robust TO-220 package for heat dissipation
  • Low distortion performance

Applications:

  • RF amplifiers
  • Transmitter circuits
  • Industrial and commercial RF systems

This information is based on available datasheets and manufacturer documentation.

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